By Claudia Wong, Kelvin Yuk, G. R. Branner and Syed Reza Bahadur Originally Appears: European Microwave Circuits Conference, pp. 587-590, Oct. 2011. Abstract A wideband frequency doubler based on AlGaN/GaN HEMT devices is presented. Rationale for the
A complete empirical large-signal model for high-power AlGaN/GaN HEMTs (GaN HEMT) utilizing an improved drain current (Ids ) formulation with self-heating and charge-trapping modifications is presented. The new drain current equation accurately model
By Kelvin Yuk, G. R. Branner and David McQuate First appears: IEEE MTT-S Int. Microw. Symp., pp. 753-756, Jun. 2009. A new empirical large-signal model for high-power GaN HEMTs utilizing an improved drain current (Ids) model is presented. The new
