Investigation of power generation microdevices that utilize micromachining or MEMS for use in portable and self-powered systems. Autonomous and portable devices demand the need for small, lightweight energy supplies that can replace the use of conven
By Kelvin Yuk Presented: May 31, 2007 Like Dislike
A new, simplified empirical large-signal model for high power microwave SiC MESFETs is presented. A generalized drain current source equation is developed, allowing close predictions of both pulsed and static IV characteristics, which vary significan
High power, high conversion gain microwave frequency doublers using wide bandgap semiconductor devices are developed. A method of determining the optimal harmonic terminations using accurate nonlinear computer models and load- and source-pull simulat
A high-voltage (HV) integrated circuit has been demonstrated to transport fluidic droplet samples on programmable paths across the array of driving electrodes on its hydrophobically coated surface. This exciter chip is the engine for dielectrophoresi
This is a brief tutorial on the use of ADS Momentum.
An empirical large-signal model for high power microwave SiC MESFETs capable of predicting self-heating thermal behavior is presented. A generalized drain current equation based on pulsed-gate IV characteristics measuring up to 2A and 58V is presente
By Kelvin Yuk and G. R. Branner Originally appears: 2011 Midwest Symposium on Circuits and Systems Microwave frequency multipliers provide a high performance means of generating microwave and millimeter-wave signals in a wide variety of
Nowadays, there is a million of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET) in digital, analog, and mixed-signals circuits, and noise in transistors has limited the minimum signal level that a circuit can process with acceptable quali
Published at WAMICON on April 25, 2017 J. Tan, K. S. Yuk, and G.R. Branner Dept. of Electrical and Computer Engineering University of California at Davis Davis, USA Abstract A wideband Gallium Nitride (GaN) HEMT power amplifier (PA) achieving 7.6W
By Kelvin Yuk, Claudia Wong, G. R. Branner Originally appears: European Microwave Integrated Circuits Conference., pp. 612-615, Sept 2010. Abstract An active microwave frequency tripler using an AlGaN/GaN HEMT device is developed. This is the first
By Kelvin Yuk for the completion of EEC218A Originally published Dec 6, 2001 Abstract For the project, I propose to do the design and layout of a 4-bit serial adder. The serial adder is composed of two shift registers, one used as an accumulator for
