Published at WAMICON on April 25, 2017 J. Tan, K. S. Yuk, and G.R. Branner Dept. of Electrical and Computer Engineering University of California at Davis Davis, USA Abstract A wideband Gallium Nitride (GaN) HEMT power amplifier (PA) achieving 7.6W
By Claudia Wong, Kelvin Yuk, G. R. Branner and Syed Reza Bahadur Originally Appears: European Microwave Circuits Conference, pp. 587-590, Oct. 2011. Abstract A wideband frequency doubler based on AlGaN/GaN HEMT devices is presented. Rationale for the
By Kelvin Yuk and G. R. Branner Originally appears: 2011 Midwest Symposium on Circuits and Systems Microwave frequency multipliers provide a high performance means of generating microwave and millimeter-wave signals in a wide variety of
By Kelvin Yuk, G.R. Branner Originally presented: 2011 Midwest Symposium on Circuits and Systems (MWSCAS) Date: Aug 9, 2011 Location: Yonsei University, Seoul, Korea Kelvin Yuk Kelvin Yuk obtained his PhD in Electrical Engineering in 2012.
By Kelvin Yuk, Claudia Wong, G. R. Branner Originally appears: European Microwave Integrated Circuits Conference., pp. 612-615, Sept 2010. Abstract An active microwave frequency tripler using an AlGaN/GaN HEMT device is developed. This is the first
High power, high conversion gain microwave frequency doublers using wide bandgap semiconductor devices are developed. A method of determining the optimal harmonic terminations using accurate nonlinear computer models and load- and source-pull simulat
A complete empirical large-signal model for high-power AlGaN/GaN HEMTs (GaN HEMT) utilizing an improved drain current (Ids ) formulation with self-heating and charge-trapping modifications is presented. The new drain current equation accurately model
By Kelvin Yuk Description of Antenna Testing A detailed block diagram of the test setup illustrating the signal path is shown in Figure 1. A photograph of the antenna setup is shown in Figure 2. The antenna range was set up on the roof of Kemper
By Kelvin Yuk, G. R. Branner and David McQuate First appears: IEEE MTT-S Int. Microw. Symp., pp. 753-756, Jun. 2009. A new empirical large-signal model for high-power GaN HEMTs utilizing an improved drain current (Ids) model is presented. The new
This is a brief tutorial on the use of ADS Momentum.
An empirical large-signal model for high power microwave SiC MESFETs capable of predicting self-heating thermal behavior is presented. A generalized drain current equation based on pulsed-gate IV characteristics measuring up to 2A and 58V is presente
Microwave frequency multipliers provide a high performance means of generating microwave and millimeter-wave signals in a wide variety of communications and radar systems. The advances in active microwave frequency multipliers due to improvements in
