Published at WAMICON on April 25, 2017 J. Tan, K. S. Yuk, and G.R. Branner Dept. of Electrical and Computer Engineering University of California at Davis Davis, USA Abstract A wideband Gallium Nitride (GaN) HEMT power amplifier (PA) achieving 7.6W
By Claudia Wong, Kelvin Yuk, G. R. Branner and Syed Reza Bahadur Originally Appears: European Microwave Circuits Conference, pp. 587-590, Oct. 2011. Abstract A wideband frequency doubler based on AlGaN/GaN HEMT devices is presented. Rationale for the
By Kelvin Yuk and Chi Ho Yue EEC282 June 14, 2002 Introduction The purpose of this project is to explore details and benefits of co-design. We choose to implement the 1024-Point FFT for its applications in signal processing and communication. The
Nowadays, there is a million of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET) in digital, analog, and mixed-signals circuits, and noise in transistors has limited the minimum signal level that a circuit can process with acceptable quali
By Kelvin Yuk and Jorge Campos Written: June 7, 2002 Even though research on Silicon-on-Insulator (SOI) devices has proven it to be the next technology that will significantly improve the performance of digital integrated circuits, many skeptics have
A high-voltage (HV) integrated circuit has been demonstrated to transport fluidic droplet samples on programmable paths across the array of driving electrodes on its hydrophobically coated surface. This exciter chip is the engine for dielectrophoresi
By Kelvin Yuk, G.R. Branner Originally presented: 2011 Midwest Symposium on Circuits and Systems (MWSCAS) Date: Aug 9, 2011 Location: Yonsei University, Seoul, Korea Like Dislike
Review by Kelvin Yuk Presented: June 11, 2003 Like Dislike
A high-voltage (HV) SOI CMOS VLSI chip has been demonstrated to transport droplets on programmable paths across its coated surface. This HV exciter for a fluidic lab-on-a-chip system creates dielectrophoretic forces that move and help inject droplets
By Kelvin Yuk, G. R. Branner and David McQuate First appears: IEEE MTT-S Int. Microw. Symp., pp. 753-756, Jun. 2009. A new empirical large-signal model for high-power GaN HEMTs utilizing an improved drain current (Ids) model is presented. The new
This is a brief tutorial on the use of ADS Momentum.
Using micro-scale fabrication and high voltage technologies, a fluid analysis system based on the transportation of fluid droplets by dielectrophoresis (DEP) can be developed. This thesis describes the development of a two-dimensional high voltage
