Micro Power Generators [Presentation]
By Kelvin Yuk, Sung Park Presented: Dec 4, 2003 Like Dislike
By Kelvin Yuk, Sung Park Presented: Dec 4, 2003 Like Dislike
Nowadays, there is a million of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET) in digital, analog, and mixed-signals circuits, and noise in transistors has limited the minimum signal level that a circuit can process with acceptable quali
By Kelvin Yuk and G. R. Branner Originally appears: 2011 Midwest Symposium on Circuits and Systems Microwave frequency multipliers provide a high performance means of generating microwave and millimeter-wave signals in a wide variety of
By Claudia Wong, Kelvin Yuk, G. R. Branner and Syed Reza Bahadur Originally Appears: European Microwave Circuits Conference, pp. 587-590, Oct. 2011. Abstract A wideband frequency doubler based on AlGaN/GaN HEMT devices is presented. Rationale for the
By Kelvin Yuk, G.R. Branner Originally presented: 2011 Midwest Symposium on Circuits and Systems (MWSCAS) Date: Aug 9, 2011 Location: Yonsei University, Seoul, Korea Like Dislike
As reduced order modeling of large scale systems by using Pade approximation has become an important part of improving the computation speed of circuit simulation, more methods are being explored. Pade approximation by moment matching (AWE)
Using micro-scale fabrication and high voltage technologies, a fluid analysis system based on the transportation of fluid droplets by dielectrophoresis (DEP) can be developed. This thesis describes the development of a two-dimensional high voltage
This is a brief tutorial on the use of ADS Momentum.
An empirical large-signal model for high power microwave SiC MESFETs capable of predicting self-heating thermal behavior is presented. A generalized drain current equation based on pulsed-gate IV characteristics measuring up to 2A and 58V is presente
By Kelvin Yuk and Chi Ho Yue EEC282 June 14, 2002 Introduction The purpose of this project is to explore details and benefits of co-design. We choose to implement the 1024-Point FFT for its applications in signal processing and communication. The
By Kelvin Yuk, G. R. Branner and David McQuate First appears: IEEE MTT-S Int. Microw. Symp., pp. 753-756, Jun. 2009. A new empirical large-signal model for high-power GaN HEMTs utilizing an improved drain current (Ids) model is presented. The new
Published at WAMICON on April 25, 2017 J. Tan, K. S. Yuk, and G.R. Branner Dept. of Electrical and Computer Engineering University of California at Davis Davis, USA Abstract A wideband Gallium Nitride (GaN) HEMT power amplifier (PA) achieving 7.6W